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2024年6月2日发(作者：)

专利内容由知识产权出版社提供

专利名称：Collar formation using selective SiGe/Si etch

发明人：Naim Moumen

申请号：US10770278

申请日：20040202

公开号：US2A1

公开日：20050127

专利附图：

摘要：A method of forming collar isolation for a trench storage memory cell structure

is provided in which amorphous Si (a:Si) and silicon germanium (SiGe) are first formed into

a trench structure. An etching process that is selective to a:Si as compared to SiGe is

employed in defining the regions in which the collar isolation will be formed. The

selective etching process employed in the present invention is a wet etch process that

includes etching with HF, rinsing, etching with NHOH, rinsing, and drying with a

monohydric alcohol such as isopropanol. The sequence of NHOH etching and rinsing may

be repeated any number of times. The conditions used in the selective etching process of

the present invention are capable of etching a:Si at a faster rate than SiGe.

申请人：Naim Moumen

地址：Austin TX US

国籍：US

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