MTK_平台开机流程应用指南

MediaTek

MTK平台开机流程应用指南

Power-On Procedure Application Note

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Preliminary (Released) Information

Revision: 1.0

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Power-On Procedure

Preliminary Information Application Note

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Power-On Procedure

Preliminary Information Application Note

Revision History

Revision Date (mm/dd/yyyy)

1.0

03/31/2006

Author

李素娜

Comments

Initial version

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Power-On Procedure

Preliminary Information Application Note

Table of Contents

2

3

Table 4

1.

1.1

1.2

1.3

1.4

2.

开机方式及硬件实现方法.......................................................................................................................................5

正常开关机......................................................................................................................................................5

充电开机.........................................................................................................................................................6

闹钟开机.........................................................................................................................................................7

开机debug流程图如下：...............................................................................................................................8

常见问题分析与解答..............................................................................................................................................9

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Power-On Procedure

Preliminary Information Application Note

1. 开机方式及硬件实现方法

1.1 正常开关机

手机开机硬件电路图

正常开机过程

开机过程：按下power key 后，二极管导通，PWRKEY检测到低电平,驱动PMIC打开LDOs，之后PMIC使BB复

位，随之BB起来进入软件开机程序，完成开机，按power key关机时，首先执行软件关机程序，随后复位及LDOs也

被关闭，完成关机。

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Power-On Procedure

Preliminary Information

1.2 充电开机

Application Note

开机过程：当插充电器给手机充电时，CHRIN检测到高电平，驱动PMIC打开LDOs，如果此时电池的电压

>3.2V,PMIC产生EINT 中断(高电平)，（如果此时电池的电压<3.2v，先小电流充电使电池电压>3.2v） PMIC使BB复

位，BB起来执行软件开机程序，完成充电开机。

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Power-On Procedure

Preliminary Information

1.3 闹钟开机

Application Note

闹钟开机过程

开机过程：闹钟醒来时，BBwakeup先起来由低电平变高电平,然后PMIC的所有LDO后起来，过200ms后PMIC使

BB复位，执行软件开机程序，当按下左键停止闹钟，完成开机。其关机过程同正常关机一样。

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Power-On Procedure

Preliminary Information

1.4 开机debug流程图如下：

Application Note

按powerkey

检查最基本的信号包

括,LDO, Reset, Clock,

BB wake,以及贴片问题

Clk不正常，查看26MHz，13KHz焊接及其负载电容值

LDO电压不对，查看MT6305BN的PIN3，

MT6205/17/26/27需加上拉电阻至VBAT

6219/28需拉至地

正常

检查EMI配置，如

WST, RLT和PRLT以

及page size.

检查Audio_bias-R上的容值是否为51K 1%

根据nor flash和sram的时序要求适当的调整WST,

RLT和PRLT这三个参数

正确

检查Nand flash问题,

如是否支持NAND,以及

NAND ID Code是否在

nand_mtd.c所支持的

列表内

有nand_support时，必须要有nand

flash系统才能启动

检查make file，如nor

flash type设置及是否

支持charger与use共

用中断等问题

还要检查手机是否支持某个功能

而在MAKE FILE 中是否定义此功

能

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Power-On Procedure

Preliminary Information Application Note

2.

1.

常见问题分析与解答

按powerkey手机不能开机

检查硬件电路发现

a) 漏掉Audio_bias-R的51KR

b) 32Khz焊接不良

2. 手机不能正常开机(MT6226)

a) 量测信号发现VCORE=1.2V,(MT6226 VCORE=1.8V),发现MT6305BN的PIN3悬浮，未上拉至地

b) 更换MCP,而相关软件设定为相应修改

3. Download完毕不能开机，电流一直在50mA到20mA左右摆动

a) EMI配置的问题，可以根据nor flash和sram的时序要求适当的调整WST, RLT和PRLT这三个三个参数，

另外还要注意page size设置是否正确；

4. 从S71PL127JB0BAW9U切换到QB之后不能开机

a)

这两颗MCP的SRAM Die是不同的，所以就会有SRAM部分的timing, page size是不一样

1．

S71PL127JB0BAW9U使用Toshiba SRAM, 16B page size, Toe is 25ns, Twp is 50ns;

2．

S71PL127JB0BAWQB使用Samsung utRAM, 16B page size, Toe < 35ns, Twp > 55ns;

b)

从上面可以看到QB系列的SRAM读写时间都比较慢，需要适当调整RLT和WST两个参数才能正常开机；对QB

的正确配置应该是：

/* 4MB SRAM: Spansion PL127JB0BAWQB0 */

{EMI_CS1, EMI_BURST_MODE, EMI_4_WAIT_STATE, EMI_4_WAIT_STATE,

EMI_16B_PER_PAGE, EMI_1_WAIT_STATE, EMI_16BIT_DEVICE, EMI_RBLN_ENABLE,

EMI_SETUP_TIME_1, EMI_SETUP_TIME_1, EMI_HOLD_TIME_0}

c)

另外还需要特别注意page size设置是否正确；

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