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2024年3月17日发(作者：)

专利内容由知识产权出版社提供

专利名称：Complementary junction-narrowing implants

for formation of ultra-shallow junctions

发明人：Jain, Amitabh,Butler, Stephanie W.

申请号：EP04101123.0

申请日：20040318

公开号：EP1460680A3

公开日：20050817

专利附图：

摘要：Methods are disclosed for forming ultra shallow junctions in semiconductor

substrates using multiple ion implantation steps. The ion implantation steps include

implantation of at least one electronically-active dopant such as boron (320) as well as

the implantation of at least two species, such as fluorine (310) and antimony (300),

effective at limiting junction broadening by channeling during dopant implantation and/or

by thermal diffusion. Following dopant implantation, the electronically-active dopant is

activated by thermal processing (330).

申请人：TEXAS INSTRUMENTS INCORPORATED

地址：P.O. Box 655474, 13500 North Central Expressway Dallas, TX 75265 US

国籍：US

代理机构：Holt, Michael

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